Yield improvement of chemical mechanical planarization processes

Edge-over-Erosion Error Prediction Method Based on Multi-Level Machine Learning Algorithm

As VLSI process node continue to shrink, chemical mechanical planarization (CMP) process for copper interconnect has become an essential technique for enabling many-layer interconnection. Recently, Edge-over-Erosion error (EoE-error), which originates from overpolishing and could cause yield loss, is observed in various CMP processes, while its mechanism is still unclear. To predict these error...

Direct Measurement of Planarization Length for Copper Chemical Mechanical Planarization Polishing (cmp) Processes Using a Large Pattern Test Mask

We have used a large pattern test mask and a specific arrangement of structures on a wafer for direct measurement of an average planarization length for copper chemical mechanical polishing (CMP) processes. We propose new minimum, maximum, and average planarization length definitions, based on up and down area measurements as a function of trench width. The average planarization length is usefu...

The Characterization of Nanoparticle Element Oxide Slurries Used in Chemical-Mechanical Planarization by Single Particle ICP-MS

This study outlines the quantitation and characterization of element oxide nanoparticles (Al2O3, and CeO2) commonly used in the nanoelectronics and semiconductor fabrication industry for the chemical-mechanical planarization (CMP) of semiconductor surfaces. CMP is a process of smoothing surfaces with the combination of chemical and mechanical forces in preparation for photolithography. The proc...

Copper voids improvement for the copper dual damascene interconnection process

The mechanism of copper (Cu) voids formation from electro-chemical plating (ECP) followed by Cu chemical mechanical polishing (CMP) are studied in Cu dual-damascene interconnection. The formation of Cu voids at metal lines is the main problem that causes not only the failure of via-induced metal-island corrosion but also yield loss. The galvanic theory and Cu lifting mechanism are proposed to e...

Damascene Process and Chemical Mechanical Planarization